MS-Tu-E-59
Modeling, Simulation and Analysis of Interface and Defect Problems in Solids - Part II of III
For Part I, see MS-Tu-D-59
For Part III, see MS-We-D-59

Date: August 11
Time: 16:00--18:00
Room: 402B

(Note: Click title to show the abstract.)

Organizer:
Xiang, Yang (Hong Kong Univ. of Sci. & Tech.)

Abstract: Interfaces or defects in crystalline materials, such as vacancies, dislocations, cracks, grain boundaries, and surfaces, play important roles in the mechanical, electronic, and plastic properties of these materials. The complexity of modeling microstructures of these defects and their evolution at various length and time scales presents new challenges for mathematical modeling and analysis. Multiphysics models are required to accurately describe the complicated interactions among various defects involved in the equilibrium and dynamics processes. The speakers in this minisymposium will discuss recent advances in the modeling approaches and new findings obtained in analysis and simulations.


MS-Tu-E-59-1
16:00--16:30
Computing Transition Rates of Rare Events in Dislocation Dynamics
Jin, Congming (Zhejiang Sci-Tech Univ.)
Xiang, Yang (Hong Kong Univ. of Sci. & Tech.)


MS-Tu-E-59-2
16:30--17:00
Emergence of step flow from atomistic scheme of epitaxial growth in 1+1 dimensions
Lu, Jianfeng (Duke Univ.)


MS-Tu-E-59-3
17:00--17:30
Discrete and continuum models for the long-range elastic effects of stepped epitaxial surfaces
Xiang, Yang (Hong Kong Univ. of Sci. & Tech.)


MS-Tu-E-59-4
17:30--18:00
Dislocations and Twist Grain Boundaries in Van der Waals Bilayers
Dai, Shuyang (Univ. of Pennsylvania)

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Footnote:
Code: Type-Date-Time-Room No.
Type : IL=Invited Lecture, SL=Special Lectures, MS=Minisymposia, IM=Industrial Minisymposia, CP=Contributed Papers, PP=Posters
Date: Mo=Monday, Tu=Tuesday, We=Wednesday, Th=Thursday, Fr=Friday
Time : A=8:30-9:30, B=10:00-11:00, C=11:10-12:10, BC=10:00-12:10, D=13:30-15:30, E=16:00-18:00, F=19:00-20:00, G=12:10-13:30, H=15:30-16:00
Room No.: TBA