MS-We-D-59
Modeling, Simulation and Analysis of Interface and Defect Problems in Solids - Part III of III
For Part I, see MS-Tu-D-59
For Part II, see MS-Tu-E-59

Date: August 12
Time: 13:30--15:30
Room: 402B

(Note: Click title to show the abstract.)

Organizer:
Xiang, Yang (Hong Kong Univ. of Sci. & Tech.)

Abstract: Interfaces or defects in crystalline materials, such as vacancies, dislocations, cracks, grain boundaries, and surfaces, play important roles in the mechanical, electronic, and plastic properties of these materials. The complexity of modeling microstructures of these defects and their evolution at various length and time scales presents new challenges for mathematical modeling and analysis. Multiphysics models are required to accurately describe the complicated interactions among various defects involved in the equilibrium and dynamics processes. The speakers in this minisymposium will discuss recent advances in the modeling approaches and new findings obtained in analysis and simulations.


MS-We-D-59-1
13:30--14:00
Efficient sum-of-exponentials approximations for the heat kernel and their applications
Jiang, Shidong (New Jersey Inst. of Tech.)


MS-We-D-59-2
14:00--14:30
Construction and Analysis of Atomistic/Continuum Coupling Method
Zhang, Lei (Shanghai Jiao Tong Univ.)


MS-We-D-59-3
14:30--15:00
Dislocation climb formulation for discrete dislocation dynamics
Srolovitz, David J (Univ. of Pennsylvania)


MS-We-D-59-4
15:00--15:30
Efficient Algorithms for Transition State Calculations
Gao, Weiguo (Fudan Univ.)

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Footnote:
Code: Type-Date-Time-Room No.
Type : IL=Invited Lecture, SL=Special Lectures, MS=Minisymposia, IM=Industrial Minisymposia, CP=Contributed Papers, PP=Posters
Date: Mo=Monday, Tu=Tuesday, We=Wednesday, Th=Thursday, Fr=Friday
Time : A=8:30-9:30, B=10:00-11:00, C=11:10-12:10, BC=10:00-12:10, D=13:30-15:30, E=16:00-18:00, F=19:00-20:00, G=12:10-13:30, H=15:30-16:00
Room No.: TBA